| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of evaluating an epitaxial wafer capable of detecting, with high sensitivity, defects resulting from dislocation, fine crystalline defect, and polishing which occurs on the surface of an epitaxial layer formed on an epitaxial wafer, and to provide a method of manufacturing the epitaxial wafer. <P>SOLUTION: The method of evaluating the epitaxial wafer 1 is provided for evaluating the surface of the epitaxial layer 11 as to the epitaxial wafer 1 having the epitaxial layer 11 on the main surface of a semiconductor single crystal substrate 10. The method includes an evaluation object layer forming step of forming an evaluation object layer 2a in the epitaxial layer 11 of the epitaxial wafer 1 by a vapor-phase epitaxy method, and an evaluation step of evaluating a state of the surface of the epitaxial layer 11 by evaluating the state of the surface of the evaluation object layer 2a. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
