| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a package manufacturing method for reliably performing anodic bonding between a bonding material 35 and a wafer 40 for a base substrate even when adopting the bonding material 35 with a large resistance value. <P>SOLUTION: The method for manufacturing a package by performing anodic bonding between the bonding material 35 previously fixed onto the inner surface of a wafer 50 for a lid substrate formed of an insulating body and the inner surface of the wafer 40 for the base substrate formed of an insulating body, includes an anodic bonding process for arranging a bonding assisting material 72 to be anodic on the outer surface of the wafer 50 for the lid substrate, arranging a cathode 71 on the outer surface of the wafer 40 for the base substrate, and then, applying a voltage. The bonding assisting material 72 is formed of a material to generate an anodic bonding reaction between the bonding assisting material, and the first substrate in the anodic bonding process. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
