METHOD FOR TUNING A WORK FUNCTION OF HIGH-K METAL GATE DEVICES

摘要

A method of fabricating a semiconductor device includes forming a first trench and a second trench on a semiconductor substrate and forming a first metal layer in the first and second trenches. The first metal layer is then removed, at least partially, from within the first trench but not the second trench. A second metal layer and a third metal layer are formed in the first and second trenches. A thermal process is used to reflow the second metal layer and the third metal layer