摘要 |
The invention relates to a method for treating photovoltaic cells against efficiency loss during illumination, allowing the treatment time to be reduced while improving stability in the "regenerated" state to temperatures above 170°C. For this purpose, the invention relates to a method for treating photovoltaic cells against efficiency loss during illumination, said method comprising the following steps: obtaining a boron-doped silicon substrate containing oxygen dimers in order to form a photovoltaic cell, heating the substrate to a temperature between 300°C and 500°C for a pre-determined treatment time, and directly polarising the photovoltaic cell at a pre-determined potential difference for a pre-determined treatment time. |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;DUBOIS, SEBASTIEN;ENJALBERT, NICOLAS;GARANDET, JEAN-PAUL;VEIRMAN, JORDI |
发明人 |
DUBOIS, SEBASTIEN;ENJALBERT, NICOLAS;GARANDET, JEAN-PAUL;VEIRMAN, JORDI |