| 摘要 |
According to the embodiments, exposure is performed on a resist on a substrate at a first focus position by using a phase shift mask in which a first light transmitting area and a second light transmitting area are formed adjacently via a light shielding pattern and a phase difference between light transmitting through the first light transmitting area and light transmitting through the second light transmitting area is &phgr;≠&pgr;, and exposure is performed on the resist at a second focus position different from the first focus position by using the phase shift mask. |
