| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, the method forming two types of terminals different in forms by a simple process. <P>SOLUTION: In this method of manufacturing a semiconductor device, a photosensitive resin film is formed on a substrate W1 on which an electrode terminal comprising a first conductive layer 11 is provided, and is exposed to light and developed to form first and second openings reaching the electrode terminal; the photosensitive resin film is baked to be altered to an insulating layer 14; a second conductive layer 17 connected to the electrode terminal is formed on the insulating layer 14 including the first opening; a third conductive layer 18, having an oxidation-reduction potential of which the difference from that of the first conductive layer 11 is smaller than a difference of the oxidation-reduction potential between the first conductive layer 11 and the second conductive layer 17, is formed on the second conductive layer 17; a photosensitive resin film is formed on the substrate W1, and exposed to light and developed to form a third opening 13d reaching the third conductive layer 18 and a fourth opening 13e reaching the electrode terminal via the second opening; and the photosensitive resin film is baked to be modified to an insulating layer 19 to form a bump connected to the third conductive layer 18. <P>COPYRIGHT: (C)2011,JPO&INPIT |
