| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-performance semiconductor device having a configuration enabling sufficient reduction of parasitic capacitance between wirings, achieving high operation speed of a thin film transistor used for a driver circuit formed on an insulating surface, including a thin film transistor having stable electric characteristics even if a channel length is short and configuring multiple kinds of circuits by manufacturing the structure of multiple kinds of thin film transistors on the same substrate. <P>SOLUTION: The semiconductor device includes: a gate electrode layer formed on an insulating surface; a gate insulating layer formed on the gate electrode layer; a first oxide semiconductor layer formed on the gate insulating layer; a second oxide semiconductor layer formed on and in contact with the first oxide semiconductor layer; an oxide insulating layer formed so as to be superimposed on a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer, and in contact with the second oxide semiconductor layer; and a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer. The first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are provided in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
