| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure having a Cu alloy layer for a display device which has an insulating film, a Cu alloy film and a thin film transistor oxide semiconductor layer sequentially from a substrate, is excellent in bondability with a substrate and/or an insulating film even if the Cu alloy film is electrically and directly connected to the substrate and/or the insulating film by omitting a barrier metal layer such as Ti or Mo, and capable of obtaining low electric resistance as a characteristic of a Cu-based material, and low contact resistance with a transparent conductive film for configuring the oxide semiconductor layer and/or a pixel electrode. SOLUTION: In the wiring structure, the Cu alloy film contains at least one kind of an element selected from a group including Mn, Ni, Zn, Al, Ti, Mg, Ca, W and Nb. The Cu alloy film is directly connected to a substrate and/or an insulating film and a semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT |
