METHOD OF MANUFACTURING SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To decrease the number of processes of manufacturing a split gate nonvolatile storage device. SOLUTION: The split gate nonvolatile storage device includes: a substrate (2); a floating gate (5) formed on the substrate (2) via a gate insulating film (7); a control gate (6) formed by the floating gate (5) via a tunnel insulating film (8); a first source/drain diffusion layer (4) formed on the substrate (2) on the side of the control gate (6); a second source/drain diffusion layer (3) formed on the substrate (2) on the side of the floating gate (5); a channel region provided to the substrate between the first source/drain diffusion layer (4) and second source/drain diffusion layer (3); and a silicide (21) in contact with the second source/drain diffusion layer (3). COPYRIGHT: (C)2011,JPO&INPIT