PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CONTACT STRUCTURE FORMED BY GROWTH, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS FOR MANUFACTURING THE DEVICES

摘要

A phase change memory device includes a semiconductor substrate having an impurity region and an interlayer dielectric applying a tensile stress formed on the semiconductor substrate and having contact holes exposing the impurity region. Switching elements are formed in the contact holes; and sidewall spacers interposed between the switching elements and the interlayer dielectric and formed as a dielectric layer applying a compressive stress.