| 摘要 |
A photoconductor having a layer stack (72) with a semiconductor layer (64) photoconductive for a predetermined wavelength range between two semiconductor boundary layers (62) with a larger band gap than the photoconductive semiconductor layer (64) on a substrate (60), wherein the semiconductor boundary layers (62) have deep impurities for trapping and recombining free charge carriers from the photoconductive semiconductor layer (64), and two electrodes connected to the photoconductive semiconductor layer (64), for lateral current flow between the electrodes through the photoconductive semiconductor layer (64).
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