发明名称 |
EQUIPMENT FOR GROWING SAPPHIRE SINGLE CRYSTAL |
摘要 |
The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.
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申请公布号 |
US2011056430(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100873617 |
申请日期 |
2010.09.01 |
申请人 |
HOSHIKAWA KEIGO;MIYAGAWA CHIHIRO;NAKAMURA TAICHI |
发明人 |
HOSHIKAWA KEIGO;MIYAGAWA CHIHIRO;NAKAMURA TAICHI |
分类号 |
C30B15/14 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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