发明名称 EQUIPMENT FOR GROWING SAPPHIRE SINGLE CRYSTAL
摘要 The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.
申请公布号 US2011056430(A1) 申请公布日期 2011.03.10
申请号 US20100873617 申请日期 2010.09.01
申请人 HOSHIKAWA KEIGO;MIYAGAWA CHIHIRO;NAKAMURA TAICHI 发明人 HOSHIKAWA KEIGO;MIYAGAWA CHIHIRO;NAKAMURA TAICHI
分类号 C30B15/14 主分类号 C30B15/14
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