| 摘要 |
<p>Disclosed is a semiconductor device wherein an on-current is increased and a leak current is reduced. An active matrix substrate using the semiconductor device and the display device using the semiconductor device are also disclosed. The switching element (semiconductor device) (18) having a top gate electrode (21) and a bottom gate electrode (23) is provided with a silicon layer (semiconductor layer) (SL), which is provided between the top gate electrode (21) and the bottom gate electrode (light shielding film) (23), and has a source region (24), a drain region (28), a channel region (26), and lightly doped impurity regions (25, 27). The bottom gate electrode (23) is provided below a silicon layer (SL) region to be a depleted region, and the bottom gate electrode (23) is controlled such that the gate electrode has a predetermined potential.</p> |
