| 发明名称 |
DIHALIDE GERMANIUM(II) PRECURSORS FOR GERMANIUM-CONTAINING FILM DEPOSITIONS |
| 摘要 |
<p>Disclosed are GeX2 -Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5 = n = 2. These molecules have lower melting points and/or increased volatility compared to GeCl2 -dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.</p> |
| 申请公布号 |
WO2011027321(A1) |
申请公布日期 |
2011.03.10 |
| 申请号 |
WO2010IB53961 |
申请日期 |
2010.09.02 |
| 申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE;GATINEAU, JULIEN;ZAUNER, ANDREAS;ISHII, HANA |
发明人 |
GATINEAU, JULIEN;ZAUNER, ANDREAS;ISHII, HANA |
| 分类号 |
C07D211/12;C07D213/16;C07F7/30;C23C16/14;C23C16/30 |
主分类号 |
C07D211/12 |
| 代理机构 |
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