<p>PURPOSE: A semiconductor device manufacturing method is provided to reduce the micro loading which can occur during the process by etching the high dielectric material. CONSTITUTION: An underlying pattern is formed on a substrate(100). At least one dielectric layer is formed on the underlying pattern. The top dielectric layer is formed on one or more dielectric layer. The upper pattern exposing a partial domain of the top dielectric layer is formed on the top dielectric layer. The partial domain of the top dielectric layer(120c) exposing is etched.</p>
