| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a single crystal body by which reduction in air-tightness in a production device for a single crystal body is suppressed, and to provide a method of producing a free-standing single-crystal substrate. SOLUTION: The method of producing a single crystal by a vapor phase growth method comprises: a step where a group IIIB element metal is melted to form a melt 11 of the group IIIB element metal; a step where a feed pipe 5 for feeding a halogen gas is inserted into the melt 11, a bubble 7 smaller than an inside diameter that of the feed pipe 5 is fed inside the melt 11 to extract the halide gas of the group IIIB element; and a step where a nitrogen-containing gas and the halide gas of the group IIIB element are fed to the surface of a seed substrate 3, and the nitrogen-containing gas and the halide of the group IIIB element are reacted on the seed substrate 3 to grow a single crystal body. COPYRIGHT: (C)2011,JPO&INPIT
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