发明名称 Structure And Method Of Making Interconnect Element Having Metal Traces Embedded In Surface Of Dielectric
摘要 An interconnect element is provided. A monolithic dielectric element has a first exposed major surface, a plurality of first recesses extending inwardly from the first major surface, and a second exposed major surface remote from the first major surface, a plurality of second recesses extending inwardly from the second major surface. A plurality of first metal interconnect patterns are embedded in the plurality of first recesses and extend in one or more directions along the first major surface. A plurality of second metal interconnect patterns are embedded in the plurality of second recesses and extend in one or more directions along the second major surface. A plurality of non-hollow metal posts extend through the dielectric element between at least some of the plurality of first metal interconnect patterns and at least some of the plurality of second metal interconnect patterns.
申请公布号 US2011057324(A1) 申请公布日期 2011.03.10
申请号 US20100941511 申请日期 2010.11.08
申请人 TESSERA INTERCONNECT MATERIALS, INC. 发明人 KOTAKE HIDEKI;HYODO KIYOSHI;KUROSAWA INETARO;HASHIMOTO YUKIO;YOSHINO TOKU;IIJIMA TOMOO
分类号 H01L23/522 主分类号 H01L23/522
代理机构 代理人
主权项
地址