SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can be improved in yield by eliminating a step of an interlayer insulating film formed between a memory cell array region and a peripheral circuit region. SOLUTION: The semiconductor device has: a first region 4 in which a plurality of first elements 10 element-isolated by element isolation insulating films 2a and 2b are formed on a semiconductor substrate 1; a second region 5 which is arranged on the semiconductor substrate 1 adjacently to the first region 4 and in which a plurality of second elements 20 element-isolated by element isolation insulating films 2b and 2c are formed and less in height than the first elements 10; dummy insulating films 6c and 6d arranged at least partially on regions of the element isolation insulating films 2b and 2c in the second region 5; and an interlayer insulating film 7 formed over the first region 4 and second region 5. COPYRIGHT: (C)2011,JPO&INPIT