| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate semiconductor device the switching speed of which hardly changes in spite of a change in temperature. SOLUTION: The insulated gate semiconductor device 10 switches in accordance with the potential of a gate electrode 34, and includes: a first semiconductor region 22 of a first conduction type; a second semiconductor region 24b of a second conduction type adjoining the first semiconductor region 22; a third semiconductor region 26 of the first conduction type isolated from the first semiconductor region 22 by the second semiconductor region 24b; and the gate electrode 34 opposed, via a gate insulating film 32, to the second semiconductor region 24b within a range wherein the first semiconductor region 22 and third semiconductor region 26 are isolated. A crystal defect 25a having an energy level higher than the Fermi level of the second semiconductor region 24b is formed in at least one of the second semiconductor region 24b within a range where the second semiconductor region 24b is in contact with the gate insulating film 32 and the gate insulating film 32 within a range where the gate insulating film 32 is in contact with the second semiconductor region 24b. COPYRIGHT: (C)2011,JPO&INPIT |
