| 摘要 |
A semiconductor manufacturing process is provided. First, a wafer with a material layer and an exposed photoresist layer formed thereon is provided, wherein the wafer has a center area and an edge area. Thereafter, the property of the exposed photoresist layer is varied, so as to make a critical dimension of the exposed photoresist layer in the center area different from that of the same in the edge area. After the edge property of the exposed photoresist layer is varied, an etching process is performed to the wafer by using the exposed photoresist layer as a mask, so as to make a patterned material layer having a uniform critical dimension formed on the wafer.
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