发明名称 |
NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE |
摘要 |
In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.
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申请公布号 |
US2011057167(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100947431 |
申请日期 |
2010.11.16 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UENO MASAKI;ENYA YOHEI;KYONO TAKASHI;AKITA KATSUSHI;YOSHIZUMI YUSUKE;SUMITOMO TAKAMICHI;NAKAMURA TAKAO |
分类号 |
H01L33/04;H01L33/26;H01L33/32 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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