Semiconductor device and method for manufacturing the same

摘要

The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a recess structure formed thereon; a gate structure covering the recess structure; a source electrode and a drain electrode which are disposed to be spaced apart from each other with respect to the gate structure interposed therebetween, on the semiconductor layer, wherein the semiconductor layer having an upper layer whose thickness is increased toward a first direction facing the drain electrode from the gate structure.