发明名称 MEMS DEVICE WITH STRESS ISOLATION AND METHOD OF FABRICATION
摘要 A MEMS device (20) with stress isolation includes elements (28, 30, 32) formed in a first structural layer (24) and elements (68, 70) formed in a second structural layer (26), with the layer (26) being spaced apart from the first structural layer (24). Fabrication methodology (80) entails forming (92, 94, 104) junctions (72, 74) between the layers (24, 26). The junctions (72, 74) connect corresponding elements (30, 32) of the first layer (24) with elements (68, 70) of the second layer (26). The fabrication methodology (80) further entails releasing the structural layers (24, 26) from an underlying substrate (22) so that all of the elements (30, 32, 68, 70) are suspended above the substrate (22) of the MEMS device (20), wherein attachment of the elements (30, 32, 68, 70) with the substrate (22) occurs only at a central area (46) of the substrate (22).
申请公布号 WO2011028359(A2) 申请公布日期 2011.03.10
申请号 WO2010US44517 申请日期 2010.08.05
申请人 FREESCALE SEMICONDUCTOR INC.;GEISBERGER, AARON A. 发明人 GEISBERGER, AARON A.
分类号 B81B7/02;B81C1/00;H01L21/02 主分类号 B81B7/02
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