METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a doping apparatus and a doping method that can carry out doping to the carrier concentration which is optimum for obtaining a desired electric characteristic non-destructively and in an easy manner, and to provide a method for fabricating a thin-film transistor using the same. SOLUTION: An electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and the characteristic is controlled by controlling this doping method. By the present invention, information can be momentarily acquired by in-situ monitoring the characteristic and can be fed back without a time lag. COPYRIGHT: (C)2011,JPO&INPIT