| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method and device for a silicon single crystal, which can prevent degradation in discharging ability of a discharge line caused by accumulation of oxides in an air executer in a manufacturing process of a silicon single crystal using a volatile dopant. SOLUTION: A discharge line 11 for discharging a gas in a furnace during the manufacturing process of a silicon single crystal includes: at least two parallelly connected air ejectors 12a, 12b; exchange valves 16a, 16b, 17a, 17b disposed in front and rear of the air ejectors 12a, 12b; a sequencer 21 for controlling the opening and the closing of the valves 16a, 16b, 17a, 17b; and a water sealing pump 13 connected to the rear step of the air ejector 12a and 12b; wherein the air ejectors 12a and 12b are exchanged by controlling the opening and the closing of 16a, 16b, 17a, 17b, respectively, with the sequencer 21 during the manufacturing process of the silicon single crystal. COPYRIGHT: (C)2011,JPO&INPIT
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