发明名称 |
Lateral Insulated Gate Bipolar Transistors (LIGBTS) |
摘要 |
This invention generally relates to lateral insulated gate bipolar transistors (LIGBTs), for example in integrated circuits, methods of increasing switching speed of an LIGBT, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT, and methods of fabricating an LIGBT. In particular, a method of suppressing parasitic thyristor latch-up in a bulk silicon LIGBT comprises selecting a current gain αv for a vertical transistor of a parasitic thyristor of the LIGBT such that in at least one predetermined mode of operation of the LIGBT αv<1−αp where αp is a current gain of a parasitic bipolar transistor having a base-emitter junction formed by a Schottky contact between the a semiconductor surface and a metal enriched epoxy die attach.
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申请公布号 |
US2011057230(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20090648818 |
申请日期 |
2009.12.29 |
申请人 |
UDREA FLORIN;PATHIRANA VASANTHA;TRAJKOVIC TANYA;UDUGAMPOLA NISHAD |
发明人 |
UDREA FLORIN;PATHIRANA VASANTHA;TRAJKOVIC TANYA;UDUGAMPOLA NISHAD |
分类号 |
H01L29/739;H01L21/331;H01L21/761 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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