发明名称 |
III-NITRIDE LIGHT EMITTING DEVICE WITH CURVAT1JRE CONTROL LAYER |
摘要 |
A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.
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申请公布号 |
US2011057213(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20090555000 |
申请日期 |
2009.09.08 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
ROMANO LINDA T.;DEB PARIJAT PRAMIL;KIM ANDREW Y.;KAEDING JOHN F. |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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