SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting element is provided with: a laminated structure having an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer arranged between the n-type semiconductor layer and the p-type semiconductor layer; a p-side electrode arranged in contact with the p-type semiconductor layer; an n-side electrode arranged in contact with the n-type semiconductor layer; a high-reflection insulating layer, which is arranged in contact with the n-type semiconductor layer and has a reflectance to light emitted from the light emitting layer higher than that of the n-side electrode to light emitted from the light emitting layer; and an upper layer metal layer, which is arranged at least on a part of the n-side electrode and at least a part of the high-reflection insulating layer and is electrically connected to the n-side electrode.  The area of an n-side electrode region in contact with the n-type semiconductor layer is smaller than that of a region where the high-reflection insulating layer is sandwiched between the n-type semiconductor layer and the upper layer metal layer.  Thus, the semiconductor light emitting element and a semiconductor light emitting device having high mountability, excellent operation characteristics and high light extraction efficiency are provided.