LOW NOISE JFET

摘要

A low noise (1/f) junction field effect transistor (JFET) and method are disclosed. A buried layer of first conductivity type is formed in a substrate (102). An epitaxial layer of second conductivity type is formed over the substrate (103). First well regions of first conductivity type are formed in the epitaxial layer down to the bottom gate (106); and a second well region of second conductivity type is formed between the first well regions (108). Isolation regions are formed in the surface of the epitaxial layer (110). A first Vt region of first conductivity type is formed in the second well region between first and second isolation regions (112); and a second Vt region of second conductivity type is formed in the first Vt region (114), the first Vt region being deeper than the second Vt region. A source region and a drain region of first conductivity type are formed in the first Vt region (118).