发明名称 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.
申请公布号 WO2011027701(A1) 申请公布日期 2011.03.10
申请号 WO2010JP64425 申请日期 2010.08.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SAKAKURA, MASAYUKI;OIKAWA, YOSHIAKI;YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;TSUBUKU, MASASHI;AKIMOTO, KENGO;HOSOBA, MIYUKI 发明人 SAKAKURA, MASAYUKI;OIKAWA, YOSHIAKI;YAMAZAKI, SHUNPEI;SAKATA, JUNICHIRO;TSUBUKU, MASASHI;AKIMOTO, KENGO;HOSOBA, MIYUKI
分类号 H01L29/786;H01L21/28;H01L21/336;H01L29/417;H01L29/423;H01L29/49;H01L51/50;H05B33/10;H05B33/12;H05B33/22 主分类号 H01L29/786
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