| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element which has high light extraction efficiency and high light emission efficiency. <P>SOLUTION: The nitride semiconductor light emitting element includes a nitride semiconductor layer, a conductive first oxide layer, and an insulating second oxide layer, and the first oxide layer and second oxide layer are made of oxide materials of the same kind. It is preferred that titanium in a titanium dioxide forming the first oxide layer is doped with one of niobium, tantalum, molybdenum, arsenic, antimony, aluminum, and tungsten by 1 to 10% in terms of mol ratio, and titanium in a titanium dioxide forming the second oxide layer is doped with one of niobium, tantalum, molybdenum, arsenic, antimony, aluminum, and tungsten by <1% in terms of mol ratio. <P>COPYRIGHT: (C)2011,JPO&INPIT |
