| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser processing method of wafer capable of efficiently laser-processing along a street formed on a wafer without influencing on quality, by considering the amount of expansion slightly expanding toward the side of relatively large area. <P>SOLUTION: In the laser processing method, a to-be-processed wafer is so laser-processed along the street that laser processing for a center region which has the largest area becomes the last. Beforehand, for the wafer for gauge, a first laser processing process and a second laser processing process are performed on a processing region corresponding to the street formed on the to-be-processed wafer, for each processing region of the predetermined number, and deviation on the center side in a Y-axis direction of the wafer for gauge is detected for each processing region of the predetermined number. Thereby compensated data is prepared for each processing region of the predetermined number. When the first laser processing process and the second laser processing process are performed for the to-be-processed wafer, indexing feed amount is compensated based on the compensated data for each performance of laser processing along the streets of the predetermined number. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
