发明名称 ETCHING SOLUTION COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide an etching solution composition which can show an excellent ability of removing an etching residue even on a transparent conductive film that is formed on a substrate without an under-layer film as well as a transparent conductive film that is formed on an under-layer film formed on a substrate, can also prevent the foam formation, causes no precipitation of any solid material, and therefore has a longer solution service life compared to a conventional one. SOLUTION: The etching solution composition for an indium oxide transparent conductive film comprises at least one member selected from oxalic acid, a naphthalene sulfonic acid condensate or a salt thereof, hydrochloric acid, sulfuric acid and a water-soluble amine, and water. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011049602(A) 申请公布日期 2011.03.10
申请号 JP20100270711 申请日期 2010.12.03
申请人 NAGASE CHEMTEX CORP 发明人 YAMABE TAKASHI;NISHIJIMA YOSHITAKA;YASUE HIDEKUNI;MUKAI YOSHIHIRO
分类号 H01L21/306 主分类号 H01L21/306
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