| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a compound semiconductor crystal by which the reproducibility of crystal growth conditions is assured and a stable single crystal yield is obtained, in a single crystal pulling method using a liquid encapsulating agent (LEC method). SOLUTION: The method for producing a compound semiconductor crystal includes: an accommodation process for accommodating a raw material 6 and a liquid encapsulating agent 7 in a crucible 3 supported by a susceptor 4; a melting process for melting the raw material 6 and the liquid encapsulating agent 7 by heating the crucible 3; a crystal growth process for obtaining the compound semiconductor crystal 10 by bringing a seed crystal 2 into contact with a raw material melt 6 in the crucible 3; and a correction process for correcting the thickness of a heat amount control part 11, provided beforehand between the crucible 3 and the susceptor 4, according to the wear amount of the inner peripheral surface of the crucible 3 brought into contact with the raw material 6 and the liquid encapsulating agent 7, before the crystal growth process. COPYRIGHT: (C)2011,JPO&INPIT
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