发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
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申请公布号 |
US2011059600(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100862180 |
申请日期 |
2010.08.24 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
SAKAI MASANORI;KAGA YUKINAO;YOKOGAWA TAKASHI;SAITO TATSUYUKI |
分类号 |
H01L21/443;B08B5/00 |
主分类号 |
H01L21/443 |
代理机构 |
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代理人 |
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地址 |
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