| 摘要 |
A reactor (10) for the production of polycrystalline silicon is disclosed, comprising a reactor floor (12) exhibiting a plurality of nozzles (40), through which a gas containing silicon flows into the reactor (10). On an outer surface (33) of the reactor floor (12) a cavity (71) is circumscribed by this outer surface (33) and a wall (70), the cavity (71) providing for the distribution of the gas containing silicon to at least part of the nozzles (40).
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