DEVICE FOR THE PRODUCTION OF Si NANOWIRES BY MEANS OF ELECTRODEPOSITION AT AMBIENT TEMPERATURE, METHOD FOR PREPARING SAME AND RESULTING NANOWIRES

摘要

The invention relates to: a device for the cold production of pure silicon nanowires by means of electrodeposition in an enclosure insulated from the atmosphere, the associated method, and the resulting nanowires. The device includes at least one deposition solution (1a), an ionic solvent (1b), and a substrate (2) characterised in that it includes at least one nanoporous membrane (2a). The device and the associated method allow a large number of amorphous pure silicon nanowires having uniform diameters and desired lengths to be produced more cheaply, as well as allowing crystalline silicon nanowires to be obtained by means of vacuum annealing following production.