| 摘要 |
PURPOSE: An internal voltage generator for a semiconductor memory apparatus are provided to make the operating properties of an internal circuit stable by generating an internal voltage having minimum AC noise. CONSTITUTION: In an internal voltage generator for a semiconductor memory, a first driving part(31) generates the internal voltage for an active period. A second driver part(32) additionally generates the internal voltage during a data read period and data writing period. A third driving part(33) generates the internal voltage during at least one initial constant period. |
