发明名称 |
Halbleiterbauelement und Halbleiterbauelementanordnung mit verbessertem Temperaturverhalten |
摘要 |
The semiconductor component has a cell field with a number of transistor cells, each having a channel zone (30) between 2 terminal zones (10,22) and a control electrode (40) for the channel zone, a common terminal electrode (50) coupled to one terminal zone of each transistor cell. The latter terminal zones are arranged so that the electrical resistance between the terminal zone and the common terminal electrode is dependent on the position of the cell in the cell field, the temperature in the vicinity of the cell and/or the current flowing through the cell. - An INDEPENDENT CLAIM for a semiconductor component device is also included. |
申请公布号 |
DE10345556(B4) |
申请公布日期 |
2011.03.10 |
申请号 |
DE2003145556 |
申请日期 |
2003.09.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DENISON, MARIE;ESTL, HANNES |
分类号 |
H01L29/78;H01L23/34;H01L29/06;H01L29/08;H01L29/10;H01L29/417;H03K17/08;H03K17/082;H03K17/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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