| 摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory apparatus and a manufacturing method thereof are provided to improve the yield rate by restraining the short generated by the bending of the word line conductive layer. CONSTITUTION: A word line conductive layer(41a ~ 41d) is laminated on the first area and the second area. A semiconductor layer comprises a pillar(45A) extended in a direction perpendicular to the substrate. A charge storing layer is formed between the conductive layer and the side of pillar. A first trench is arranged to have the first pitch in the first direction on the first area.</p> |
