| 摘要 |
A plurality of conductive layers are stacked in a first region and a second region. A semiconductor layer is surrounded by the conductive layers in the first region, includes a columnar portion extending in a perpendicular direction with respect to a substrate. A charge storage layer is formed between the conductive layers and a side surface of the columnar portion. The conductive layers includes first trenches, second trenches, and third trenches. The first trenches are arranged in the first region so as to have a first pitch in a first direction. The second trenches are arranged in the second region so as to have a second pitch in the first direction. The third trenches are arranged in the second region so as to have a third pitch in the first direction and so as to be sandwiched by the second trenches.
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