| 摘要 |
In order to remove plating burrs generated in etching step, there is provided a manufacturing method of semiconductor devices on each of unit leadframes in a leadframe material in which a plurality of the unit leadframes are arranged in plural rows or a single row, wherein at least two types of plating burr removals are conducted after a half-etching is performed onto a front surface side of the leadframe material, using a first plating layer as resist film.
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