发明名称 SILICON ETCHING LIQUID AND ETCHING METHOD
摘要 In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.
申请公布号 US2011059619(A1) 申请公布日期 2011.03.10
申请号 US20090991510 申请日期 2009.04.24
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 YAGUCHI KAZUYOSHI;SOTOAKA RYUJI
分类号 H01L21/306;C09K13/02 主分类号 H01L21/306
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