发明名称 |
Memory Cell With Proportional Current Self-Reference Sensing |
摘要 |
Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.
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申请公布号 |
US2011058405(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100946582 |
申请日期 |
2010.11.15 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
CHEN YIRAN;LI HAI;ZHU WENZHONG;WANG XIAOBIN;WANG RAN;LIU HARRY HONGYUE |
分类号 |
G11C11/16;G11C7/06;G11C11/21 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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