发明名称 |
PROCESS FOR PRODUCTION OF SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SILICON-CARBIDE-COATED CARBON BASE MATERIAL, SINTERED (SILICON CARBIDE)-CARBON COMPLEX, CERAMIC-COATED SINTERED (SILICON CARBIDE)-CARBON COMPLEX, AND PROCESS FOR PRODUCTION OF SIN |
摘要 |
Disclosed is a process for producing a silicon-carbide-coated carbon base material in which the surface of a carbon base material such as graphite is coated with a silicon carbide coating film densely and uniformly. The process is characterized by comprising: a step of preparing a carbon base material which has, formed on the surface thereof, a base part composed of an SP2 carbon structure having no dangling bond and an edge part composed of an SP2 carbon structure having a dangling bond; and a step of reacting the surface of the carbon base material with an SiO gas in an atmosphere in which the temperature is 1400 to 1600°C and the pressure is 1 to 150 Pa to form silicon carbide, thereby producing a carbon base material coated with silicon carbide. |
申请公布号 |
WO2011027756(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
WO2010JP64871 |
申请日期 |
2010.09.01 |
申请人 |
TOYO TANSO CO., LTD.;NAKAMURA, MASAHARU;MIYAMOTO, YOSHINARI;TOJO, TETSURO |
发明人 |
NAKAMURA, MASAHARU;MIYAMOTO, YOSHINARI;TOJO, TETSURO |
分类号 |
C04B35/52;C01B31/04;C01B31/36;C04B41/87 |
主分类号 |
C04B35/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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