Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.
申请公布号
WO2011029010(A2)
申请公布日期
2011.03.10
申请号
WO2010US47827
申请日期
2010.09.03
申请人
VISHAY-SILICONIX;LU, HAMILTON;CHAU, THE-TU;TERRILL, KYLE;PATTANAYAK, DEVA, N.;SHI, SHARON;CHEN, KUO-IN;XU, ROBERT
发明人
LU, HAMILTON;CHAU, THE-TU;TERRILL, KYLE;PATTANAYAK, DEVA, N.;SHI, SHARON;CHEN, KUO-IN;XU, ROBERT