发明名称 Light-Emitting Element, Light-Emitting Device, and Method for Manufacturing the Same
摘要 Disclosed is a light-emitting element which includes a first light-emitting layer over and in contact with a hole-transport layer and a second light-emitting layer over and in contact with the first light-emitting layer. The first and the second light-emitting layers contain a bipolar host material and an emissive guest material. The guest material in the first light-emitting layer has a lower ability for capturing a hole than a guest material in the second light-emitting layer; therefore, the hole-transport property of the first light-emitting layer can be controlled to be higher than that of the second light-emitting layer. The difference in hole-transport property between the first and second light-emitting layers allows a recombination region to be widely spread in the light-emitting layers. An anti-reducing material may be provided in the hole-transport layer, which prevents the hole-transport layer from being reduced by electrons which fail to undergo recombination in the light-emitting layers.
申请公布号 US2011057178(A1) 申请公布日期 2011.03.10
申请号 US20100873544 申请日期 2010.09.01
申请人 SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. 发明人 SHITAGAKI SATOKO;SEO SATOSHI
分类号 H01L51/54 主分类号 H01L51/54
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