发明名称 |
Light-Emitting Element, Light-Emitting Device, and Method for Manufacturing the Same |
摘要 |
Disclosed is a light-emitting element which includes a first light-emitting layer over and in contact with a hole-transport layer and a second light-emitting layer over and in contact with the first light-emitting layer. The first and the second light-emitting layers contain a bipolar host material and an emissive guest material. The guest material in the first light-emitting layer has a lower ability for capturing a hole than a guest material in the second light-emitting layer; therefore, the hole-transport property of the first light-emitting layer can be controlled to be higher than that of the second light-emitting layer. The difference in hole-transport property between the first and second light-emitting layers allows a recombination region to be widely spread in the light-emitting layers. An anti-reducing material may be provided in the hole-transport layer, which prevents the hole-transport layer from being reduced by electrons which fail to undergo recombination in the light-emitting layers. |
申请公布号 |
US2011057178(A1) |
申请公布日期 |
2011.03.10 |
申请号 |
US20100873544 |
申请日期 |
2010.09.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. |
发明人 |
SHITAGAKI SATOKO;SEO SATOSHI |
分类号 |
H01L51/54 |
主分类号 |
H01L51/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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