| 摘要 |
PURPOSE: A plasma ion doping device and a plasma ion doping method are provided to secure the uniformity of a doping process by applying the same voltage to an electrode. CONSTITUTION: A source generates plasma in a process chamber. A platen(12) supports a substrate in the process chamber. First and second electrodes clamp the substrate with first and second clamping voltages applied from the outside before a process. A controller(40) controls the first and second clamping voltages applied to the first and second electrodes. An injection pulse source accelerates the ions of plasma toward the substrate. The controller makes the first and second clamping voltages equal in a process.
|
