| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching system in which etching can be carried out with high selection ratio, while sustaining high plasma resistance of the organic mask layer, such as resist layer, sticking of deposits to electrode is effectively eliminated, and the plasma density can be controlled. <P>SOLUTION: An upper electrode 34 and a lower electrode 16 for supporting a wafer are arranged facing each other in a chamber 10, the upper electrode 34 is connected to a first high-frequency power supply 48 for applying a first high-frequency power of relatively high frequency, the lower electrode 16 is connected to a second high-frequency power supply 90 for applying a second high-frequency power of relatively low frequency, the upper electrode 34 is connected to a variable DC power supply 50 and plasma etching is carried out, by supplying processing gas into the chamber 10 and generating plasma. An electrically conductive member 91 which is always grounded is provided to allow current based on DC voltage from the DC power supply 50 applied to the upper electrode 34 to escape via plasma. <P>COPYRIGHT: (C)2011,JPO&INPIT |
