发明名称 COMPOSITION FOR PRODUCING DOPED ZINC OXIDE THIN FILM, AND METHOD FOR PRODUCING DOPED ZINC OXIDE THIN FILM USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a composition for producing a zinc oxide thin film, which uses an organic zinc compound as a starting material, is not ignitable, and can be easily handled, and which can form a transparent zinc oxide thin film doped with a group 3B element by being heated at≤300°C, and to provide a method for obtaining a transparent zinc oxide thin film doped with a group 3B element using the composition. <P>SOLUTION: The composition for producing a doped zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to a solution of the organic zinc compound and a group 3B element compound, wherein the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The composition for producing a doped zinc oxide thin film contains a product which is obtained by partially hydrolyzing an organic zinc compound by adding water to a solution of the organic zinc compound and then adding a group 3B element compound so that the molar ratio of the group 3B element compound to the organic zinc compound is within the range of 0.005-0.3. The method for forming a zinc oxide thin film doped with a group 3B element includes applying the composition on the surface of a substrate and heating the applied composition. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011046566(A) 申请公布日期 2011.03.10
申请号 JP20090197052 申请日期 2009.08.27
申请人 TOSOH FINECHEM CORP 发明人 INABA KOICHIRO;TOYODA KOJI;HAGA KENICHI;TOKUTOME KOICHI
分类号 C01G9/02;C07F3/06 主分类号 C01G9/02
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